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THDT6511D
Application Specific Discretes A.S.D.TM
FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100s HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has beengiven to the internal wire bonding. The "4-point" configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700s 5/310s 10/700s 5/310s 1.2/50s 1/20s 0.5/700s 0.2/310s 2/10s 2/10s 2/10s 2/10s 10/1000s 10/1000s 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2.5kV 125A (*) 1kV 40A (*) SCHEMATIC DIAGRAM
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
PRELIMINARY DATASHEET
TIP 1 GND 2 GND 3 RING 4
8 TIP 7 GND 6 GND 5 RING
(*) with series resistors or PTC.
February 1998 - Ed: 2
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP Peak pulse current Parameter (see note 1) 10/1000s 5/310s 2/10s t = 300 ms t=1s t=5s Value 40 50 125 10 3.5 1 1 - 55 to + 150 150 260
% I PP
Unit A
ITSM
Non repetitive surge peak on-state current F = 50 Hz F = 50 Hz, 60 x 1 s, 2 mn between pulse Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s
A
ITSM Tstg Tj TL
A C C
Note 1 : Pulse waveform : 10/1000s tr =10s 5/310s tr =5s 2/10s tr =2s
tp=1000s tp=310s tp=10s
100
50
0 tr tp
t
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VBR VBO IH VF VFP IBO IPP C T Parameter Stand-off voltage Leakagecurrent at stand-offvoltage Breakdown voltage Breakover voltage Holding current Forward voltage drop Peak forward voltage
IH VBO VBR VRM IRM VF V I IF
Breakover current Peak pulse current Capacitance Temperature coefficient
IBO
Ipp
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THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND Symbol VF VFP IF = 1 A see curve fig. 1 Test conditions tp = 100 s NA NA Min. Typ. Max. 2 NA Unit V V
NA : Non Available 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol VBR VBO IRM IBO IBO IH T C dV/dt VD = 100 mVRMS F = 1KHz 5 VRM = 63 V tp = 100 s F = 50 Hz RG = 600 150 15 500 110 IR = 1mA Tests conditions Min. 65 68 85 100 450 500 Typ. Max. Unit V V A mA mA mA 10-4/C pF kV / s
Linear ramp up to 67 % of VBR
3/6
THDT6511D
DYNAMIC CHARACTERISTICS : VFP and VBO Figure 1 :
60 10 5 2
250 ns
10 us 10 ms
t
-85 -100 -130
1 us
200 ns
Under lightning and power crossing test, the device limits the transient voltage to the values indicated in the figure LSSGR TEST DIAGRAM Figure 2 :
THDT6511D
To stand the LSSGR test requirements, Rp must be 15
4/6
THDT6511D
TYPICAL APPLICATION RING GENERATOR
-V bat
LINE A T E S T R E L A Y LINE B
PTC
TIP
RING RELAY
Integrated SLIC
PTC
THBT200S
THDT6511D
RING
Line A D1 P1
Tip
- For positive surges versus GND (TIP), diode D1 will conduct. - For negative surges versus GND (TIP), protectiondevice P 1 will trigger at maximum voltage equal to VBO.
Line B
Ring
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THDT6511D
ORDER CODE
THDT
65
1
1
D
RL
Tape and reel
ASYMMETRICAL TRISIL
Low Dynamic Characteristics SO8 PACKAGE
BREAKDOWN VOLTAGE VERSION PACKAGE MECHANICAL DATA. SO8 Plastic DIMENSIONS Millimetres Inches Min. A a1 a2 b b1 C c1 D E e e3 F L M S MARKING : DT651D PACKAGING : Products supplied in antistatic tube or tape and reel. Weight : 0.08g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
REF.
Typ. Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.50 45(typ)
Typ. Max. 0.069 0.010 0.065 0.019 0.010 0.020
0.1 0.35 0.19
4.8 5.8 1.27 3.81 3.8 0.4
5.0 6.2
0.189 0.228 0.050 0.150
0.197 0.244
4.0
0.15
0.157 0.050 0.024
1.27 0.016 0.6 8 (max)
(c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6

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